Vishay SiHB17N80E N-Channel MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-263 SIHB17N80E-GE3

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Subtotal 50 units (supplied on a continuous strip)*

PHP17,140.70

(exc. VAT)

PHP19,197.60

(inc. VAT)

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  • Shipping from March 10, 2027
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Units
Per Unit
50 - 95PHP342.814
100 - 245PHP314.226
250 - 495PHP290.134
500 +PHP269.484

*price indicative

Packaging Options:
RS Stock No.:
204-7227P
Mfr. Part No.:
SIHB17N80E-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

15A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-263

Series

SiHB17N80E

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

290mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

122nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

208W

Maximum Gate Source Voltage Vgs

30V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Width

4.83mm

Height

15.88mm

Length

10.67mm

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET has a low figure-of-merit (FOM) Ron x Qg and a low input capacitance (Ciss).

Ultra low gate charge (Qg)

Avalanche energy rated (UIS)

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