Vishay SiJ128LDP N-Channel MOSFET, 25.5 A, 80 V Enhancement, 4-Pin SO-8 SiJ128LDP-T1-GE3

View all MOSFETs
Bulk discount available
View bulk pricing options

Subtotal 100 units (supplied on a continuous strip)*

PHP9,177.20

(exc. VAT)

PHP10,278.50

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from November 01, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per Unit
100 - 480PHP91.772
500 - 980PHP88.101
1000 - 1480PHP83.697
1500 +PHP78.675

*price indicative

Packaging Options:
RS Stock No.:
204-7217P
Mfr. Part No.:
SiJ128LDP-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

25.5A

Maximum Drain Source Voltage Vds

80V

Series

SiJ128LDP

Package Type

SO-8

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

15.6mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

22.3W

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

30nC

Maximum Operating Temperature

150°C

Width

1.14mm

Standards/Approvals

No

Length

5.25mm

Height

6.25mm

Automotive Standard

No

The Vishay N-Channel 80 V (D-S) MOSFET has a very low Qg and Qoss reduce power loss and improve efficiency. It has a very low Qg and Qoss reduce power loss and improve efficiency.

TrenchFET Gen IV power MOSFET

100 % Rg and UIS tested

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy