Vishay SiHB105N60EF N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-263 SIHB105N60EF-GE3

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Subtotal 100 units (supplied on a continuous strip)*

PHP24,744.20

(exc. VAT)

PHP27,713.50

(inc. VAT)

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  • Shipping from March 19, 2027
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Units
Per Unit
100 - 495PHP247.442
500 - 995PHP226.936
1000 - 1495PHP209.496
1500 +PHP194.372

*price indicative

Packaging Options:
RS Stock No.:
204-7205P
Mfr. Part No.:
SIHB105N60EF-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

SiHB105N60EF

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

102mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

53nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

208W

Maximum Gate Source Voltage Vgs

30V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

10.67mm

Height

15.88mm

Width

4.83mm

Automotive Standard

No

The Vishay EF Series Power MOSFET With Fast Body Diode has a 4th generation E series technology. It has reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er)

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