onsemi NVH N-Channel MOSFET, 58 A, 1200 V Enhancement, 4-Pin TO-247
- RS Stock No.:
- 202-5738P
- Mfr. Part No.:
- NVH4L040N120SC1
- Manufacturer:
- onsemi
This image is representative of the product range
Subtotal 50 units (supplied in a tube)*
PHP70,115.75
(exc. VAT)
PHP78,529.65
(inc. VAT)
FREE delivery for orders over ₱5,000.00
- Plus 394 unit(s) shipping from September 18, 2026
Units | Per Unit |
|---|---|
| 50 - 98 | PHP1,402.315 |
| 100 - 198 | PHP1,360.24 |
| 200 + | PHP1,319.425 |
*price indicative
- RS Stock No.:
- 202-5738P
- Mfr. Part No.:
- NVH4L040N120SC1
- Manufacturer:
- onsemi
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | NVH | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -50°C | |
| Maximum Power Dissipation Pd | 319W | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Operating Temperature | 170°C | |
| Length | 15.8mm | |
| Width | 5.2mm | |
| Height | 22.74mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series NVH | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -50°C | ||
Maximum Power Dissipation Pd 319W | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Operating Temperature 170°C | ||
Length 15.8mm | ||
Width 5.2mm | ||
Height 22.74mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N-Channel, 1200 V, 40 mΩ, TO247-4L
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