onsemi NVH N-Channel MOSFET, 102 A, 1200 V Enhancement, 4-Pin TO-247
- RS Stock No.:
- 202-5735P
- Mfr. Part No.:
- NVH4L020N120SC1
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal 50 units (supplied in a tube)*
PHP157,894.00
(exc. VAT)
PHP176,841.50
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- Plus 32 unit(s) shipping from September 14, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 50 - 99 | PHP3,157.88 |
| 100 - 199 | PHP2,925.91 |
| 200 + | PHP2,894.87 |
*price indicative
- RS Stock No.:
- 202-5735P
- Mfr. Part No.:
- NVH4L020N120SC1
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 102A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | NVH | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 28mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 510W | |
| Typical Gate Charge Qg @ Vgs | 220nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.8mm | |
| Width | 5.2mm | |
| Standards/Approvals | AEC-Q101 and PPAP Capable | |
| Height | 22.74mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 102A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series NVH | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 28mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 510W | ||
Typical Gate Charge Qg @ Vgs 220nC | ||
Maximum Operating Temperature 175°C | ||
Length 15.8mm | ||
Width 5.2mm | ||
Standards/Approvals AEC-Q101 and PPAP Capable | ||
Height 22.74mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N-Channel, 1200 V, 20 mΩ, TO247-4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 102 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.
AEC Q101 qualified
Production part approval process Capable
100% avalanche tested
Low effective output capacitance
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