onsemi NVB Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 7-Pin TO-263 NVBG040N120SC1
- RS Stock No.:
- 202-5731
- Mfr. Part No.:
- NVBG040N120SC1
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
PHP2,649.24
(exc. VAT)
PHP2,967.14
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 652 unit(s) shipping from December 29, 2025
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Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 48 | PHP1,324.62 | PHP2,649.24 |
| 50 - 198 | PHP1,284.885 | PHP2,569.77 |
| 200 - 398 | PHP1,246.34 | PHP2,492.68 |
| 400 + | PHP1,208.945 | PHP2,417.89 |
*price indicative
- RS Stock No.:
- 202-5731
- Mfr. Part No.:
- NVBG040N120SC1
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NVB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 178W | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.2mm | |
| Standards/Approvals | AEC-Q101 | |
| Height | 15.7mm | |
| Width | 4.7 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NVB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 178W | ||
Maximum Operating Temperature 150°C | ||
Length 10.2mm | ||
Standards/Approvals AEC-Q101 | ||
Height 15.7mm | ||
Width 4.7 mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide MOSFET, N-Channel, 1200 V, 40 mΩ, D2PAK-7L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 60 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.
AEC Q101 qualified
Production part approval process Capable
100% avalanche tested
Low effective output capacitance
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