onsemi NTB Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 7-Pin TO-263 NTBG040N120SC1
- RS Stock No.:
- 202-5690
- Mfr. Part No.:
- NTBG040N120SC1
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP5,456.80
(exc. VAT)
PHP6,111.60
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Supply shortage
- 725 left, ready to ship from another location
Our current stock is limited and our suppliers are expecting shortages.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 45 | PHP1,091.36 | PHP5,456.80 |
| 50 - 195 | PHP1,058.616 | PHP5,293.08 |
| 200 - 395 | PHP1,026.856 | PHP5,134.28 |
| 400 + | PHP996.052 | PHP4,980.26 |
*price indicative
- RS Stock No.:
- 202-5690
- Mfr. Part No.:
- NTBG040N120SC1
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-263 | |
| Series | NTB | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 357W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | 3.7V | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.7mm | |
| Standards/Approvals | RoHS | |
| Length | 10.2mm | |
| Width | 4.7 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-263 | ||
Series NTB | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 357W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf 3.7V | ||
Maximum Operating Temperature 175°C | ||
Height 15.7mm | ||
Standards/Approvals RoHS | ||
Length 10.2mm | ||
Width 4.7 mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 60 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC or DC converter, Boost inverter.
40mO drain to source on resistance
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant
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