onsemi Dual N NTTF 1 Type N-Channel MOSFET, 38 A, 60 V Enhancement, 12-Pin WQFN NTTFD9D0N06HLTWG
- RS Stock No.:
- 202-5721
- Mfr. Part No.:
- NTTFD9D0N06HLTWG
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
PHP2,175.60
(exc. VAT)
PHP2,436.675
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from June 15, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 75 | PHP87.024 | PHP2,175.60 |
| 100 - 475 | PHP84.413 | PHP2,110.33 |
| 500 - 1475 | PHP81.88 | PHP2,047.00 |
| 1500 + | PHP79.423 | PHP1,985.58 |
*price indicative
- RS Stock No.:
- 202-5721
- Mfr. Part No.:
- NTTFD9D0N06HLTWG
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NTTF | |
| Package Type | WQFN | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 9Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 13.5nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 26W | |
| Forward Voltage Vf | 0.79V | |
| Transistor Configuration | Dual N | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Width | 3.3 mm | |
| Height | 0.75mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NTTF | ||
Package Type WQFN | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 9Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 13.5nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 26W | ||
Forward Voltage Vf 0.79V | ||
Transistor Configuration Dual N | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Width 3.3 mm | ||
Height 0.75mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
The ON Semiconductor Symmetrical Dual N-Channel MOSFET includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. It is used in Computing, Communications, General purpose point of load applications.
Low inductance packaging
Lower switching losses
RoHS compliant
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