onsemi N-Channel NTTF 1 Type N-Channel MOSFET, 60 A, 40 V Enhancement, 12-Pin WQFN NTTFD4D0N04HLTWG
- RS Stock No.:
- 202-5718
- Mfr. Part No.:
- NTTFD4D0N04HLTWG
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
PHP1,992.625
(exc. VAT)
PHP2,231.75
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 8,975 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 75 | PHP79.705 | PHP1,992.63 |
| 100 - 475 | PHP77.314 | PHP1,932.85 |
| 500 - 1475 | PHP74.995 | PHP1,874.88 |
| 1500 + | PHP72.745 | PHP1,818.63 |
*price indicative
- RS Stock No.:
- 202-5718
- Mfr. Part No.:
- NTTFD4D0N04HLTWG
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NTTF | |
| Package Type | WQFN | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Forward Voltage Vf | 0.78V | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 26W | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | N-Channel | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS Compliant | |
| Height | 0.75mm | |
| Width | 3.3 mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NTTF | ||
Package Type WQFN | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Forward Voltage Vf 0.78V | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 26W | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration N-Channel | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS Compliant | ||
Height 0.75mm | ||
Width 3.3 mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
The ON Semiconductor Symmetrical Dual N-Channel MOSFET includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. It is used in Computing, Communications, General purpose point of load applications.
Low inductance packaging
Lower switching losses
RoHS compliant
Related links
- onsemi N-Channel NTTF 1 Type N-Channel MOSFET 40 V Enhancement, 12-Pin WQFN
- onsemi Dual N NTTF 1 Type N-Channel MOSFET 60 V Enhancement, 12-Pin WQFN
- onsemi Dual N NTTF 1 Type N-Channel MOSFET 60 V Enhancement, 12-Pin WQFN NTTFD9D0N06HLTWG
- DiodesZetex Dual DMHT10H032LFJ 1 Type N-Channel MOSFET 100 V Enhancement, 12-Pin VDFN DMHT10H032LFJ-13
- DiodesZetex Dual DMHT10H032LFJ 1 Type N-Channel MOSFET 100 V Enhancement, 12-Pin VDFN
- Infineon OptiMOS-TM6 Type N-Channel MOSFET 40 V Enhancement, 12-Pin PG-TSON-12 IQFH36N04NM6ATMA1
- Infineon IQF Type N-Channel Power Transistor 40 V Enhancement, 12-Pin PG-TSON-12 IQFH55N04NM6ATMA1
- Vishay SIZF4800LDT 2 Type N-Channel MOSFET 80 V Enhancement, 12-Pin 3 x 3FS SIZF4800LDT-T1-GE3