onsemi NTH Type N-Channel MOSFET, 29 A, 1200 V Enhancement, 3-Pin TO-247

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Subtotal 50 units (supplied in a tube)*

PHP29,146.50

(exc. VAT)

PHP32,644.00

(inc. VAT)

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  • 280 unit(s) ready to ship from another location
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Units
Per Unit
50 - 98PHP582.93
100 - 198PHP565.45
200 +PHP548.485

*price indicative

Packaging Options:
RS Stock No.:
202-5707P
Mfr. Part No.:
NTHL160N120SC1
Manufacturer:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

1200V

Package Type

TO-247

Series

NTH

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

119W

Typical Gate Charge Qg @ Vgs

34nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Length

15.87mm

Height

20.82mm

Automotive Standard

No

Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L


The ON Semiconductor Silicon Carbide Power MOSFET runs with 17 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC/DC Converter, boost inverter.

160mO drain to source on resistance

Ultra low gate charge

100% avalanche tested

Pb free

RoHS compliant

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