STMicroelectronics SCT Type N-Channel MOSFET, 100 A, 1200 V Depletion, 7-Pin H2PAK

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Subtotal 5 units (supplied in a tube)*

PHP13,173.25

(exc. VAT)

PHP14,754.05

(inc. VAT)

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Temporarily out of stock
  • Shipping from June 15, 2027
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Units
Per Unit
5 - 9PHP2,634.65
10 +PHP2,555.62

*price indicative

Packaging Options:
RS Stock No.:
202-5486P
Mfr. Part No.:
SCTW100N65G2AG
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

1200V

Series

SCT

Package Type

H2PAK

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

0.105Ω

Channel Mode

Depletion

Forward Voltage Vf

2.8V

Maximum Power Dissipation Pd

420W

Typical Gate Charge Qg @ Vgs

162nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

200°C

Length

15.75mm

Height

34.95mm

Standards/Approvals

No

Automotive Standard

No

The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.

Very fast and robust intrinsic body diode

Low capacitance

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