STMicroelectronics SCTW90 Type N-Channel MOSFET, 119 A, 650 V Enhancement, 3-Pin Hip-247

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Subtotal 5 units (supplied in a tube)*

PHP10,823.55

(exc. VAT)

PHP12,122.40

(inc. VAT)

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  • Shipping from April 09, 2027
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Units
Per Unit
5 - 9PHP2,164.71
10 +PHP2,099.77

*price indicative

Packaging Options:
RS Stock No.:
201-0887P
Mfr. Part No.:
SCTW90N65G2V
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

119A

Maximum Drain Source Voltage Vds

650V

Series

SCTW90

Package Type

Hip-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

157nC

Forward Voltage Vf

2.5V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

565W

Maximum Operating Temperature

200°C

Height

20.15mm

Length

15.75mm

Standards/Approvals

No

Automotive Standard

No

The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 119A and drain to source resistance 18m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very high operating junction temperature capability (TJ = 175 °C)

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitances

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