Vishay SQS484CENW Type N-Channel MOSFET, 16 A, 40 V Enhancement, 8-Pin PowerPAK 1212
- RS Stock No.:
- 200-6851
- Mfr. Part No.:
- SQS484CENW-T1_GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 50 units)*
PHP2,018.80
(exc. VAT)
PHP2,261.05
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from May 25, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 50 - 50 | PHP40.376 | PHP2,018.80 |
| 100 - 450 | PHP36.723 | PHP1,836.15 |
| 500 - 950 | PHP33.661 | PHP1,683.05 |
| 1000 - 1450 | PHP31.076 | PHP1,553.80 |
| 1500 + | PHP28.856 | PHP1,442.80 |
*price indicative
- RS Stock No.:
- 200-6851
- Mfr. Part No.:
- SQS484CENW-T1_GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAK 1212 | |
| Series | SQS484CENW | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 62.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 3.4mm | |
| Standards/Approvals | No | |
| Width | 1.12 mm | |
| Length | 3.4mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAK 1212 | ||
Series SQS484CENW | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 62.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Height 3.4mm | ||
Standards/Approvals No | ||
Width 1.12 mm | ||
Length 3.4mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay SQS484CENW-T1_GE3 is a automotive N-channel 40V (D-S) 175°C MOSFET.
TrenchFET power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested
Related links
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