Vishay TrenchFET Gen IV Type P-Channel MOSFET, 18.3 A, 30 V Enhancement, 8-Pin SO-8 Si4425FDY-T1-GE3

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Subtotal (1 reel of 3000 units)*

PHP57,405.00

(exc. VAT)

PHP64,293.00

(inc. VAT)

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3000 +PHP19.135PHP57,405.00

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RS Stock No.:
200-6796
Mfr. Part No.:
Si4425FDY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

18.3A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET Gen IV

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

16mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

16 V

Typical Gate Charge Qg @ Vgs

41nC

Maximum Power Dissipation Pd

4.8W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay Si4425FDY-T1-GE3 is a P-channel 30V (D-S) MOSFET.

TrenchFET Gen IV p-channel power MOSFET

100% Rg tested

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