onsemi Type N-Channel MOSFET, 313 A, 40 V Enhancement, 8-Pin DFN NVMFSC0D9N04C
- RS Stock No.:
- 195-8978
- Mfr. Part No.:
- NVMFSC0D9N04C
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP2,744.00
(exc. VAT)
PHP3,073.30
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 2,990 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 90 | PHP274.40 | PHP2,744.00 |
| 100 - 490 | PHP249.436 | PHP2,494.36 |
| 500 - 990 | PHP228.568 | PHP2,285.68 |
| 1000 - 1490 | PHP211.017 | PHP2,110.17 |
| 1500 + | PHP196.004 | PHP1,960.04 |
*price indicative
- RS Stock No.:
- 195-8978
- Mfr. Part No.:
- NVMFSC0D9N04C
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 313A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.87mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 86nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 166W | |
| Maximum Operating Temperature | 175°C | |
| Height | 6.25mm | |
| Length | 5.1mm | |
| Standards/Approvals | No | |
| Width | 0.95 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 313A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.87mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 86nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 166W | ||
Maximum Operating Temperature 175°C | ||
Height 6.25mm | ||
Length 5.1mm | ||
Standards/Approvals No | ||
Width 0.95 mm | ||
Automotive Standard AEC-Q101 | ||
The On Semiconductor dual cool power N-channel MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. In this wettable flank option available for enhanced optical inspection.
Advanced dual−sided cooled packaging
Small footprint for compact design
Ultra low RDS(on) to minimize conduction losses
Low QG and capacitance to minimize driver losses
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