N-Channel MOSFET, 224 A, 60 V, 8-Pin DFN8 5 x 6 onsemi NVMFSC1D6N06CL
- RS Stock No.:
- 195-2675
- Mfr. Part No.:
- NVMFSC1D6N06CL
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 pack of 10 units)**
PHP2,653.35
(exc. VAT)
PHP2,971.75
(inc. VAT)
3000 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for over PHP7,000.00 (ex VAT)
Units | Per Unit | Per Pack** |
---|---|---|
10 - 90 | PHP265.335 | PHP2,653.35 |
100 - 490 | PHP241.124 | PHP2,411.24 |
500 - 990 | PHP232.933 | PHP2,329.33 |
1000 - 1490 | PHP229.949 | PHP2,299.49 |
1500 + | PHP227.038 | PHP2,270.38 |
**price indicative
- RS Stock No.:
- 195-2675
- Mfr. Part No.:
- NVMFSC1D6N06CL
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 224 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | DFN8 5 x 6 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 2.3 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2V | |
Minimum Gate Threshold Voltage | 1.2V | |
Maximum Power Dissipation | 166 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | ±20 V | |
Width | 5mm | |
Typical Gate Charge @ Vgs | 91 nC @ 10 V | |
Maximum Operating Temperature | +150 °C | |
Length | 5.9mm | |
Number of Elements per Chip | 1 | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.2V | |
Height | 0.95mm | |
Select all | ||
---|---|---|
Manufacturer onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 224 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DFN8 5 x 6 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 2.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 166 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Width 5mm | ||
Typical Gate Charge @ Vgs 91 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 5.9mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Height 0.95mm | ||
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