onsemi Dual 2 N-Channel Power MOSFET, 25 A, 80 V Enhancement, 8-Pin DFN

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Subtotal 300 units (supplied on a reel)*

PHP12,291.30

(exc. VAT)

PHP13,766.40

(inc. VAT)

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Units
Per Unit
300 - 720PHP40.971
750 +PHP39.396

*price indicative

Packaging Options:
RS Stock No.:
195-2561P
Mfr. Part No.:
NVMFD6H852NLT1G
Manufacturer:
onsemi
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Brand

onsemi

Product Type

Power MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

80V

Package Type

DFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

31.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

3.2W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

10nC

Forward Voltage Vf

800mV

Maximum Gate Source Voltage Vgs

20V

Transistor Configuration

Dual

Maximum Operating Temperature

+175°C

Height

1.05mm

Width

5.1mm

Length

6.1mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

Small Footprint (5x6 mm) for Compact Design

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

NVMFD6H852NLWF − Wettable Flank Option for Enhanced Optical Inspection

PPAP Capable

These Devices are Pb−Free

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