onsemi NVMYS021N06CL Type N-Channel MOSFET, 27 A, 60 V Enhancement, 4-Pin LFPAK NVMYS021N06CLTWG
- RS Stock No.:
- 195-2550
- Mfr. Part No.:
- NVMYS021N06CLTWG
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 50 units)*
PHP1,596.00
(exc. VAT)
PHP1,787.50
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 2,900 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 50 - 50 | PHP31.92 | PHP1,596.00 |
| 100 - 450 | PHP29.012 | PHP1,450.60 |
| 500 - 950 | PHP27.893 | PHP1,394.65 |
| 1000 - 1450 | PHP27.536 | PHP1,376.80 |
| 1500 + | PHP27.188 | PHP1,359.40 |
*price indicative
- RS Stock No.:
- 195-2550
- Mfr. Part No.:
- NVMYS021N06CLTWG
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 27A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NVMYS021N06CL | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 31.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 28W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.25 mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Height | 1.15mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 27A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NVMYS021N06CL | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 31.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 28W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Width 4.25 mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Height 1.15mm | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free
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