onsemi NVMYS8D0N04C N-Channel MOSFET, 49 A, 40 V Enhancement, 4-Pin LFPAK

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Subtotal 300 units (supplied on a reel)*

PHP9,934.20

(exc. VAT)

PHP11,126.40

(inc. VAT)

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Units
Per Unit
300 - 720PHP33.114
750 - 1470PHP32.507
1500 +PHP32.09

*price indicative

Packaging Options:
RS Stock No.:
195-2541P
Mfr. Part No.:
NVMYS8D0N04CTWG
Manufacturer:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

49A

Maximum Drain Source Voltage Vds

40V

Package Type

LFPAK

Series

NVMYS8D0N04C

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

8.1mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

38W

Typical Gate Charge Qg @ Vgs

10nC

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Width

4.25mm

Standards/Approvals

No

Length

5mm

Height

1.15mm

Automotive Standard

AEC-Q101

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability

Small Footprint (5x6 mm) for Compact Design

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

LFPAK4 Package, Industry Standard

PPAP Capable

These Devices are Pb−Free

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