onsemi N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-263

RS Stock No.:: 195-2518P
Mfr. Part No.:: NVB150N65S3F
Manufacturer:: onsemi

onsemi N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-263

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RS Stock No.:: 195-2518P
Mfr. Part No.:: NVB150N65S3F
Manufacturer:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	24A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	150mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	192W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	43nC
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Height	4.58mm
	Standards/Approvals	No
	Width	9.65mm
	Length	10.67mm
	Automotive Standard	AEC-Q101

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 24A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 150mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 192W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 43nC
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Height 4.58mm
	Standards/Approvals No
	Width 9.65mm
	Length 10.67mm
	Automotive Standard AEC-Q101

Datasheet NVB150N65S3F

SUPERFET® III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency.SUPERFET III FRFET® MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

701 V @ TJ = 150°C

Typ. RDS(on) = 114 m

Ultra Low Gate Charge (Typ. Qg = 43 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 385 pF)

These Devices are Pb−Free

Applications

Automotive On Board Charger

Automotive DC/DC Converter for HEV

onsemi N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-263

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