onsemi NVMYS3D3N06CL N-Channel MOSFET, 133 A, 60 V Enhancement, 4-Pin LFPAK NVMYS3D3N06CLTWG
- RS Stock No.:
- 195-2513
- Mfr. Part No.:
- NVMYS3D3N06CLTWG
- Manufacturer:
- onsemi
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 195-2513
- Mfr. Part No.:
- NVMYS3D3N06CLTWG
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 133A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NVMYS3D3N06CL | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 4.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 40.7nC | |
| Maximum Power Dissipation Pd | 100W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.15mm | |
| Length | 5mm | |
| Width | 4.25mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 133A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NVMYS3D3N06CL | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 4.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 40.7nC | ||
Maximum Power Dissipation Pd 100W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 1.15mm | ||
Length 5mm | ||
Width 4.25mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free
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