onsemi NVMFS5C638NL Type N-Channel MOSFET, 133 A, 60 V Enhancement, 5-Pin DFN NVMFS5C638NLT1G
- RS Stock No.:
- 178-4407
- Mfr. Part No.:
- NVMFS5C638NLT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP1,077.12
(exc. VAT)
PHP1,206.37
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 1,450 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 90 | PHP107.712 | PHP1,077.12 |
| 100 - 240 | PHP104.483 | PHP1,044.83 |
| 250 - 490 | PHP101.35 | PHP1,013.50 |
| 500 - 990 | PHP98.312 | PHP983.12 |
| 1000 + | PHP95.364 | PHP953.64 |
*price indicative
- RS Stock No.:
- 178-4407
- Mfr. Part No.:
- NVMFS5C638NLT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 133A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | DFN | |
| Series | NVMFS5C638NL | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 18.4nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 100W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 5.1mm | |
| Width | 6.1 mm | |
| Height | 1.05mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 133A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type DFN | ||
Series NVMFS5C638NL | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 18.4nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 100W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 5.1mm | ||
Width 6.1 mm | ||
Height 1.05mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
Automotive Power MOSFET in a 5 x 6 mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection.Suitable for automotive applications.
Features
Industry Standard Small Footprint 5 x 6 mm Package
Low RDS(on)
Low QG and Capacitance
NVMFS5C638NLWF - Wettable Flank Option
PPAP capable
Benefits
Compact Design and Standard footprint for direct drop-in
Minimize Conduction Losses
Minimize Driver Losses
Enhanced Optical Inspection
Applications
Reverser Battery protection
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
End Products
Solenoid Driver – ABS, Fuel injection
Motor Control – EPS, Wipers, Fans, Seats, etc.
Load Switch – ECU, Chassis, Body
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