onsemi NTMJS1D5N04CL N-Channel MOSFET, 200 A, 40 V Enhancement, 8-Pin LFPAK
- RS Stock No.:
- 195-2505P
- Mfr. Part No.:
- NTMJS1D5N04CLTWG
- Manufacturer:
- onsemi
This image is representative of the product range
Get a bulk buy discount
Add 500 more to save 3%
View bulk pricing optionsSubtotal 100 units (supplied on a continuous strip)*
PHP9,974.50
(exc. VAT)
PHP11,171.40
(inc. VAT)
FREE delivery for orders over ₱5,000.00
Temporarily out of stock
- Shipping from November 12, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Saving |
|---|---|---|
| 100 - 480 | PHP99.745 | - |
| 500 - 980 | PHP96.073 | 3% |
| 1000 - 1480 | PHP94.842 | 4% |
| 1500 + | PHP93.64 | 6% |
*price indicative
- RS Stock No.:
- 195-2505P
- Mfr. Part No.:
- NTMJS1D5N04CLTWG
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 200A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK | |
| Series | NTMJS1D5N04CL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 70nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 110W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.9mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Height | 1.15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 200A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK | ||
Series NTMJS1D5N04CL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 70nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 110W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Width 4.9mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Height 1.15mm | ||
Automotive Standard No | ||
Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK8 Package, Industry Standard
These Devices are Pb−Free
Related links
- RS PRO 150 mm Stainless Steel Scissors
- Stanley Tylon 8m Tape Measure, Metric & Imperial
- Belden Cat6 Ethernet Cable Grey PVC Sheath, 100m
- Unistrut 41 x 41mm Slotted Galvanised Steel Strut, 2m Long
- Arduino Uno Rev 3 SMD
- RS PRO Phillips Screwdriver 150 mm Blade, 270 mm Overall
- RS PRO Combination Pliers Straight Tip, 34mm Jaw
- RS PRO Stainless Steel Perforated Metal Sheet 500mm x 500mm, 0.55mm Thick