onsemi N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-220

RS Stock No.:: 189-0372P
Mfr. Part No.:: NTP150N65S3HF
Manufacturer:: onsemi

onsemi N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-220

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RS Stock No.:: 189-0372P
Mfr. Part No.:: NTP150N65S3HF
Manufacturer:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	24A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	150mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	192W
	Typical Gate Charge Qg @ Vgs	43nC
	Maximum Gate Source Voltage Vgs	30V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	150°C
	Length	10.67mm
	Height	16.3mm
	Standards/Approvals	No
	Width	4.7mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 24A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 150mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 192W
	Typical Gate Charge Qg @ Vgs 43nC
	Maximum Gate Source Voltage Vgs 30V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 150°C
	Length 10.67mm
	Height 16.3mm
	Standards/Approvals No
	Width 4.7mm
	Automotive Standard No

Datasheet NTP150N65S3HF

COO (Country of Origin):: CN

SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

700 V @ TJ = 150 °C

Ultra Low Gate Charge (Typ. Qg = 43 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 400 pF)

Higher system reliability at low temperature operation

Excellent body diode performance (low Qrr, robust body diode)

Optimized Capacitance

Typ. RDS(on) = 121 mΩ

Lower switching loss

Higher system reliability in LLC and Phase shift full bridge circuit

Lower peak Vds and lower Vgs oscillation

Applications

Telecommunication

Cloud system

Industrial

End Products

Telecom power

Server power

EV charger

Solar / UPS

onsemi N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-220

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