onsemi NTMYS1D2N04CL Type N-Channel MOSFET, 258 A, 40 V Enhancement, 8-Pin LFPAK
- RS Stock No.:
- 189-0262
- Mfr. Part No.:
- NTMYS1D2N04CLTWG
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
PHP403,056.00
(exc. VAT)
PHP451,422.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from June 12, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | PHP134.352 | PHP403,056.00 |
| 6000 - 6000 | PHP131.147 | PHP393,441.00 |
| 9000 + | PHP131.023 | PHP393,069.00 |
*price indicative
- RS Stock No.:
- 189-0262
- Mfr. Part No.:
- NTMYS1D2N04CLTWG
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 258A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK | |
| Series | NTMYS1D2N04CL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 109nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 134W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 1.2mm | |
| Length | 5mm | |
| Width | 4.9 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 258A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK | ||
Series NTMYS1D2N04CL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 109nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 134W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 1.2mm | ||
Length 5mm | ||
Width 4.9 mm | ||
Automotive Standard No | ||
Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.
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