STMicroelectronics Type N-Channel MOSFET, 4 A, 800 V Enhancement, 3-Pin TO-252 STD5N80K5

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 10 units)*

PHP866.32

(exc. VAT)

PHP970.28

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 4,670 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
10 - 40PHP86.632PHP866.32
50 - 90PHP84.90PHP849.00
100 - 240PHP83.203PHP832.03
250 - 990PHP81.539PHP815.39
1000 +PHP79.906PHP799.06

*price indicative

Packaging Options:
RS Stock No.:
188-8440
Mfr. Part No.:
STD5N80K5
Manufacturer:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.73Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

5nC

Maximum Power Dissipation Pd

60W

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

6.6mm

Standards/Approvals

No

Width

6.2 mm

Height

2.17mm

Automotive Standard

No

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Industry’s lowest RDS(on) x area

Industry’s best FoM (figure of merit)

Ultra-low gate charge

Zener-protected

Applications

Switching applications

Related links