Infineon CoolMOS P7 Type N-Channel MOSFET, 4 A, 800 V Enhancement, 3-Pin TO-252 IPD80R1K4P7ATMA1
- RS Stock No.:
- 130-0906
- Mfr. Part No.:
- IPD80R1K4P7ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP206.15
(exc. VAT)
PHP230.90
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 2,425 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 45 | PHP41.23 | PHP206.15 |
| 50 - 95 | PHP40.198 | PHP200.99 |
| 100 - 495 | PHP39.192 | PHP195.96 |
| 500 - 995 | PHP38.214 | PHP191.07 |
| 1000 + | PHP37.26 | PHP186.30 |
*price indicative
- RS Stock No.:
- 130-0906
- Mfr. Part No.:
- IPD80R1K4P7ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-252 | |
| Series | CoolMOS P7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 32W | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Width | 6.22 mm | |
| Height | 2.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-252 | ||
Series CoolMOS P7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 32W | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Width 6.22 mm | ||
Height 2.41mm | ||
Automotive Standard No | ||
Infineon CoolMOS™P7 Power MOSFET
The 800V CoolMOS P7 Power MOSFET family establishes even higher efficiency and thermal performance. Suitable applications are power adapters, LED lighting, audio, industrial and auxiliary power.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252 IPD80R3K3P7ATMA1
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252 IPD80R750P7ATMA1
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252 IPD80R600P7ATMA1
- Infineon CoolMOS P7 Type N-Channel MOSFET 950 V Enhancement, 3-Pin TO-252