Vishay Common Drain TrenchFET Gen IV 2 N-Channel Power MOSFET, 52 A, 60 V Enhancement, 8-Pin PowerPAK 1212

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Subtotal (25 units, supplied on a continuous strip)*

PHP3,838.05

(exc. VAT)

PHP4,298.63

(inc. VAT)

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  • Shipping from October 29, 2027
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Units
Per Unit
25 - 95PHP153.522
100 - 495PHP144.31
500 - 995PHP131.322
1000 +PHP115.566

*price indicative

Packaging Options:
RS Stock No.:
188-5025P
Mfr. Part No.:
SiSF20DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

52A

Maximum Drain Source Voltage Vds

60V

Series

TrenchFET Gen IV

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

18mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

22nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

69.4W

Maximum Gate Source Voltage Vgs

20V

Transistor Configuration

Common Drain

Maximum Operating Temperature

+150°C

Height

0.75mm

Width

3.4mm

Length

3.4mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN
Common - Drain Dual N-Channel 60 V (S1-S2) MOSFET.

TrenchFET® Gen IV power MOSFET

Very low source-to-source on resistance

Integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package

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