Vishay SiSS05DN Type P-Channel MOSFET, 108 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SiSS05DN-T1-GE3

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Subtotal 50 units (supplied on a continuous strip)*

PHP4,184.55

(exc. VAT)

PHP4,686.70

(inc. VAT)

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  • Shipping from October 27, 2027
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Units
Per Unit
50 - 90PHP83.691
100 - 490PHP78.671
500 - 990PHP71.589
1000 +PHP62.998

*price indicative

Packaging Options:
RS Stock No.:
188-5013P
Mfr. Part No.:
SiSS05DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

108A

Maximum Drain Source Voltage Vds

30V

Series

SiSS05DN

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5.8mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

65.7W

Typical Gate Charge Qg @ Vgs

76nC

Forward Voltage Vf

-1.1V

Maximum Gate Source Voltage Vgs

-20V, +16V

Maximum Operating Temperature

150°C

Width

3.3mm

Standards/Approvals

No

Length

3.3mm

Height

0.78mm

Automotive Standard

No

COO (Country of Origin):
CN
P-Channel 30 V (D-S) MOSFET.

TrenchFET® Gen IV p-channel power MOSFET

Provides exceptionally low RDS(on) in a compact package that is thermally enhanced

Enables higher power density

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