Vishay SiSHA14DN N-Channel MOSFET, 20 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SiSHA14DN-T1-GE3

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Subtotal 50 units (supplied on a continuous strip)*

PHP2,222.90

(exc. VAT)

PHP2,489.65

(inc. VAT)

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Last RS stock
  • Final 5,625 unit(s), ready to ship from another location

Units
Per Unit
50 - 75PHP44.458
100 - 475PHP41.79
500 - 975PHP38.028
1000 +PHP33.465

*price indicative

Packaging Options:
RS Stock No.:
188-4957P
Mfr. Part No.:
SiSHA14DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

30V

Series

SiSHA14DN

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

8mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

26.5W

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

-16V, +20V

Typical Gate Charge Qg @ Vgs

19.4nC

Maximum Operating Temperature

150°C

Width

3.3mm

Standards/Approvals

No

Length

3.3mm

Height

0.93mm

Automotive Standard

No

COO (Country of Origin):
CN
N-Channel 30 V (D-S) MOSFET.

TrenchFET® Gen IV power MOSFET

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