onsemi N-Channel MOSFET, 65 A, 650 V Enhancement, 3-Pin TO-247

RS Stock No.:: 186-1516P
Mfr. Part No.:: NVHL040N65S3F
Manufacturer:: onsemi

onsemi N-Channel MOSFET, 65 A, 650 V Enhancement, 3-Pin TO-247

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RS Stock No.:: 186-1516P
Mfr. Part No.:: NVHL040N65S3F
Manufacturer:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	65A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	40mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	446W
	Typical Gate Charge Qg @ Vgs	153nC
	Maximum Operating Temperature	150°C
	Width	4.82mm
	Standards/Approvals	No
	Height	20.82mm
	Length	15.87mm
	Automotive Standard	AEC-Q101

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 65A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 40mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 446W
	Typical Gate Charge Qg @ Vgs 153nC
	Maximum Operating Temperature 150°C
	Width 4.82mm
	Standards/Approvals No
	Height 20.82mm
	Length 15.87mm
	Automotive Standard AEC-Q101

Datasheet NVHL040N65S3F

Non Compliant

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability

700 V @ TJ = 150°C

Ultra Low Gate Charge (Typ. Qg = 158 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 1366 pF)

PPAP Capable

Typ. RDS(on) = 32 mΩ

Higher system reliability at low temperature operation

Lower switching loss

PPAP Capable

Applications

HV DC/DC converter

End Products

On Board Charger

DC/DC Converter

onsemi N-Channel MOSFET, 65 A, 650 V Enhancement, 3-Pin TO-247

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