onsemi FCMT Type N-Channel MOSFET, 24 A, 650 V Enhancement, 4-Pin PQFN
- RS Stock No.:
- 185-9219P
- Mfr. Part No.:
- FCMT125N65S3
- Manufacturer:
- onsemi
This image is representative of the product range
Supply shortage
Due to a global supply shortage, we don't know when this will be back in stock.
- RS Stock No.:
- 185-9219P
- Mfr. Part No.:
- FCMT125N65S3
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PQFN | |
| Series | FCMT | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Maximum Power Dissipation Pd | 181W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.05mm | |
| Length | 8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PQFN | ||
Series FCMT | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Maximum Power Dissipation Pd 181W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.05mm | ||
Length 8mm | ||
Automotive Standard No | ||
Non Compliant
- COO (Country of Origin):
- PH
700 V @ TJ = 150 oC
Leadless Ultra-thin SMD package
Kelvin contact
Ultra Low Gate Charge (Typ. Qg = 49 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 406 pF)
Optimized Capacitance
Typ. RDS(on) = 100 mΩ
Internal Gate Resistance: 0.5 Ω
Higher system reliability at low temperature operation
High power density
Low gate noise and switching loss
Low switching loss
Lower peak Vds and lower Vgs oscillation
Applications
Telecommunication
Cloud system
Industrial
End Products
Telecom power
Server power
LED Lighting
Adapter
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