DiodesZetex DMT Type N-Channel MOSFET, 46.3 A, 100 V Enhancement, 4-Pin TO-252 DMTH10H025SK3-13
- RS Stock No.:
- 182-7372
- Mfr. Part No.:
- DMTH10H025SK3-13
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP347.90
(exc. VAT)
PHP389.60
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 2,220 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 90 | PHP34.79 | PHP347.90 |
| 100 - 240 | PHP27.922 | PHP279.22 |
| 250 - 490 | PHP25.374 | PHP253.74 |
| 500 - 990 | PHP23.157 | PHP231.57 |
| 1000 + | PHP19.944 | PHP199.44 |
*price indicative
- RS Stock No.:
- 182-7372
- Mfr. Part No.:
- DMTH10H025SK3-13
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 46.3A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | DMT | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 3.7W | |
| Typical Gate Charge Qg @ Vgs | 21.4nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.7mm | |
| Height | 2.26mm | |
| Width | 6.2 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 46.3A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series DMT | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 3.7W | ||
Typical Gate Charge Qg @ Vgs 21.4nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.7mm | ||
Height 2.26mm | ||
Width 6.2 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.
100% Unclamped Inductive Switching – Ensures More Reliable
and Robust End Application
Low RDS(ON) – Minimizes Power Losses
Low QG – Minimizes Switching Losses
Lead-free finish
Halogen and Antimony Free. “Green” Device.
Applications
Power Management Functions
DC-DC Converters
Backlighting
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