DiodesZetex DMP Type P-Channel MOSFET, 8.7 A, 12 V Enhancement, 6-Pin UDFN DMP1009UFDF-7
- RS Stock No.:
- 182-7286
- Mfr. Part No.:
- DMP1009UFDF-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 50 units)*
PHP960.40
(exc. VAT)
PHP1,075.65
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 45,950 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 50 - 200 | PHP19.208 | PHP960.40 |
| 250 - 450 | PHP15.375 | PHP768.75 |
| 500 - 950 | PHP13.972 | PHP698.60 |
| 1000 - 1950 | PHP12.39 | PHP619.50 |
| 2000 + | PHP11.647 | PHP582.35 |
*price indicative
- RS Stock No.:
- 182-7286
- Mfr. Part No.:
- DMP1009UFDF-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.7A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | UDFN | |
| Series | DMP | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2W | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.05 mm | |
| Height | 0.58mm | |
| Length | 2.05mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q100, AEC-Q200, AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.7A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type UDFN | ||
Series DMP | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2W | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 2.05 mm | ||
Height 0.58mm | ||
Length 2.05mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q100, AEC-Q200, AEC-Q101 | ||
- COO (Country of Origin):
- CN
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
0.6mm profile – ideal for low profile applications
PCB footprint of 4mm2
Low On-Resistance
Fast Switching Speed
Applications
Battery Management Application
Power Management Functions
DC-DC Converters
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