DiodesZetex DMP Type P-Channel MOSFET, 12.8 A, 12 V Enhancement, 6-Pin UDFN DMP1005UFDF-7
- RS Stock No.:
- 182-7235
- Mfr. Part No.:
- DMP1005UFDF-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
PHP683.55
(exc. VAT)
PHP765.575
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 4,625 unit(s) shipping from December 26, 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 225 | PHP27.342 | PHP683.55 |
| 250 - 475 | PHP26.522 | PHP663.05 |
| 500 - 975 | PHP24.931 | PHP623.28 |
| 1000 - 1975 | PHP22.687 | PHP567.18 |
| 2000 + | PHP19.965 | PHP499.13 |
*price indicative
- RS Stock No.:
- 182-7235
- Mfr. Part No.:
- DMP1005UFDF-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 12.8A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | UDFN | |
| Series | DMP | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 18.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 2.1W | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 47nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.05 mm | |
| Standards/Approvals | No | |
| Height | 0.58mm | |
| Length | 2.05mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 12.8A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type UDFN | ||
Series DMP | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 18.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 2.1W | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 47nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 2.05 mm | ||
Standards/Approvals No | ||
Height 0.58mm | ||
Length 2.05mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
0.6mm Profile – Ideal for Low Profile Applications
PCB Footprint of 4mm2
Low Gate Threshold Voltage
Low On-Resistance
ESD Protected up to 8kV
Applications
Battery Management Application
Power Management Functions
Load Switch
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