onsemi FDP Type N-Channel MOSFET, 222 A, 100 V Enhancement, 3-Pin TO-220 FDP2D3N10C

RS Stock No.:: 181-1899
Mfr. Part No.:: FDP2D3N10C
Manufacturer:: onsemi

onsemi FDP Type N-Channel MOSFET, 222 A, 100 V Enhancement, 3-Pin TO-220 FDP2D3N10C

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Subtotal (1 pack of 2 units)*

PHP712.66

(exc. VAT)

PHP798.18

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

1,548 unit(s) ready to ship from another location

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Units	Per Unit	Per Pack*
2 - 8	PHP356.33	PHP712.66
10 - 98	PHP316.60	PHP633.20
100 - 248	PHP274.56	PHP549.12
250 - 498	PHP247.115	PHP494.23
500 +	PHP225.74	PHP451.48

*price indicative

RS Stock No.:: 181-1899
Mfr. Part No.:: FDP2D3N10C
Manufacturer:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	222A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-220
	Series	FDP
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	2.3mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	214W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	108nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Length	10.36mm
	Standards/Approvals	No
	Height	15.21mm
	Width	4.67 mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 222A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-220
	Series FDP
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 2.3mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 214W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 108nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Length 10.36mm
	Standards/Approvals No
	Height 15.21mm
	Width 4.67 mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Max RDS(on) = 2.3 mΩ at VGS = 10 V, ID = 222 A

Power Density & Shielded Gate

High Performance Trench Technology for Extremely Low RDS(on)

High power density with Shielded gate technology

Extremely Low Reverse Recovery Charge, Qrr

Low Vds spike internal snubber function.

Low Gate Charge, QG = 108nC (Typ.)

Low switching loss

High Power and Current Handling Capability

Low Qrr/Trr

Soft recovery performance

Good EMI performance

Synchronous Rectification for ATX / Server / Workstation / Telecom PSU / Adapter and Industrial Power Supplies.

Motor drives and Uninterruptible Power Supplies

Micro Solar Inverter

Server

Telecom

Computing (ATX, Workstation, Adapter, Industrial Power Supplies etc.)

Motor Drive

Uninterruptible Power Supplies

onsemi FDP Type N-Channel MOSFET, 222 A, 100 V Enhancement, 3-Pin TO-220 FDP2D3N10C

FREE delivery for orders over ₱3,000.00

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