Vishay Single Type N-Channel Power MOSFET, 11 A, 500 V TO-263 IRFS11N50APBF
- RS Stock No.:
- 180-8783
- Mfr. Part No.:
- IRFS11N50APBF
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP670.32
(exc. VAT)
PHP750.76
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 355 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP134.064 | PHP670.32 |
| 10 - 20 | PHP127.65 | PHP638.25 |
| 25 + | PHP115.28 | PHP576.40 |
*price indicative
- RS Stock No.:
- 180-8783
- Mfr. Part No.:
- IRFS11N50APBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-263 | |
| Maximum Drain Source Resistance Rds | 0.52Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 170W | |
| Typical Gate Charge Qg @ Vgs | 52nC | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-263 | ||
Maximum Drain Source Resistance Rds 0.52Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 170W | ||
Typical Gate Charge Qg @ Vgs 52nC | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay MOSFET is an N-channel, TO-263-3 package is a new age product with a drain-source voltage of 500V and maximum gate-source voltage of 30V. It has a drain-source resistance of 520mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 170W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Effective coss specified
• Fully characterized capacitance and avalanche voltage and current
• Halogen and lead (Pb) free component
• Improved gate, avalanche and dynamic dV/dt
• Low gate charge Qg results in simple drive requirement
• Operating temperature ranges between -55°C and 150°C
Applications
• High speed power switching
• Switch mode power supply (SMPS)
• Uninterruptible power supplies
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