Vishay Single 1 Type N-Channel Power MOSFET, 3.1 A, 500 V TO-220FP
- RS Stock No.:
- 180-8668
- Mfr. Part No.:
- IRFI830GPBF
- Manufacturer:
- Vishay
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 180-8668
- Mfr. Part No.:
- IRFI830GPBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 3.1A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220FP | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 35W | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 3.1A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220FP | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 35W | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay IRFI830G is a N-channel power MOSFET having drain to source(Vds) voltage of 500V.The gate to source voltage(VGS) is 20V. It is having TO-220 FULLPAK package. It offers drain to source resistance (RDS.) 1.5ohms at 10VGS.
Isolated package
High voltage isolation = 2.5 kVrms (t = 60 s; f = 60 Hz)
Sink to lead creepage distance = 4.8 mm
Related links
- Vishay Single 1 Type N-Channel Power MOSFET 500 V TO-220FP IRFI830GPBF
- Vishay Single 1 Type N-Channel Power MOSFET 250 V TO-220FP
- Vishay Single 1 Type N-Channel Power MOSFET 250 V TO-220FP IRFI644GPBF
- Vishay Single 1 Type N-Channel Power MOSFET 600 V, 3-Pin
- Vishay Single 1 Type N-Channel Power MOSFET 500 V
- Vishay Single 1 Type N-Channel Power MOSFET 60 V TO-220AB
- Vishay Single 1 Type N-Channel Power MOSFET 500 V
- Vishay Single 1 Type N-Channel Power MOSFET 200 V TO-263
