Vishay Single 1 Type N-Channel Power MOSFET, 3.1 A, 500 V TO-220FP IRFI830GPBF

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Subtotal (1 tube of 50 units)*

PHP4,007.20

(exc. VAT)

PHP4,488.05

(inc. VAT)

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Units
Per Unit
Per Tube*
50 - 50PHP80.144PHP4,007.20
100 - 450PHP78.542PHP3,927.10
500 - 950PHP76.971PHP3,848.55
1000 - 2450PHP75.431PHP3,771.55
2500 +PHP73.923PHP3,696.15

*price indicative

RS Stock No.:
180-8326
Mfr. Part No.:
IRFI830GPBF
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

3.1A

Maximum Drain Source Voltage Vds

500V

Package Type

TO-220FP

Maximum Drain Source Resistance Rds

1.5Ω

Maximum Power Dissipation Pd

35W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

38nC

Transistor Configuration

Single

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Number of Elements per Chip

1

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay IRFI830G is a N-channel power MOSFET having drain to source(Vds) voltage of 500V.The gate to source voltage(VGS) is 20V. It is having TO-220 FULLPAK package. It offers drain to source resistance (RDS.) 1.5ohms at 10VGS.

Isolated package

High voltage isolation = 2.5 kVrms (t = 60 s; f = 60 Hz)

Sink to lead creepage distance = 4.8 mm

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