Vishay Single 1 Type N-Channel Power MOSFET, 3.1 A, 500 V TO-220FP IRFI830GPBF
- RS Stock No.:
- 180-8326
- Mfr. Part No.:
- IRFI830GPBF
- Manufacturer:
- Vishay
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 180-8326
- Mfr. Part No.:
- IRFI830GPBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.1A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220FP | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 35W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.1A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220FP | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 35W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay IRFI830G is a N-channel power MOSFET having drain to source(Vds) voltage of 500V.The gate to source voltage(VGS) is 20V. It is having TO-220 FULLPAK package. It offers drain to source resistance (RDS.) 1.5ohms at 10VGS.
Isolated package
High voltage isolation = 2.5 kVrms (t = 60 s; f = 60 Hz)
Sink to lead creepage distance = 4.8 mm
Related links
- Vishay Single 1 Type N-Channel Power MOSFET 500 V TO-220FP
- Vishay Single 1 Type N-Channel Power MOSFET 250 V TO-220FP
- Vishay Single 1 Type N-Channel Power MOSFET 250 V TO-220FP IRFI644GPBF
- Vishay Single 1 Type N-Channel Power MOSFET 600 V, 3-Pin
- Vishay Single 1 Type N-Channel Power MOSFET 500 V
- Vishay Single 1 Type N-Channel Power MOSFET 500 V
- Vishay Single 1 Type N-Channel Power MOSFET 60 V TO-220AB
- Vishay Single 1 Type N-Channel Power MOSFET 200 V TO-263