Dual N/P-Channel-Channel MOSFET, 3.9 A, 2.1 A, 20 V, 6-Pin TSOP-6 Vishay SI3585CDV-T1-GE3

The Vishay surface mount dual channel (both P and N-channels) MOSFET is a new age product with a drain-source voltage of 20V. The MOSFET has a drain-source resistance of 58mohm at a gate-source voltage of 4.5V. It has continuous drain currents of 3.9A and 2.1A. It has a maximum power rating of 1.4W and 1.3W. It has been optimized, for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

• DC/DC converters
• Drivers: motor, solenoid, relay
• Load switch for portable devices

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested

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