MPN

Vishay Dual SI7997DP N-Channel MOSFET, -60 A, -30 V Enhancement, 8-Pin PowerPack SI7997DP-T1-GE3

RS Stock No.:: 180-7902P
Mfr. Part No.:: SI7997DP-T1-GE3
Manufacturer:: Vishay

Vishay Dual SI7997DP N-Channel MOSFET, -60 A, -30 V Enhancement, 8-Pin PowerPack SI7997DP-T1-GE3

This image is representative of the product range

Bulk discount available

View bulk pricing options

Subtotal 50 units (supplied on a continuous strip)*

PHP9,827.40

(exc. VAT)

PHP11,006.70

(inc. VAT)

FREE delivery for orders over ₱5,000.00

Last RS stock

Final 485 unit(s), ready to ship from another location

Units	Per Unit
50 - 95	PHP196.548
100 - 495	PHP188.684
500 - 995	PHP179.25
1000 +	PHP168.498

*price indicative

RS Stock No.:: 180-7902P
Mfr. Part No.:: SI7997DP-T1-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	-60A
	Maximum Drain Source Voltage Vds	-30V
	Package Type	PowerPack
	Series	SI7997DP
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	5.5mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	-1.2V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	51nC
	Maximum Power Dissipation Pd	29W
	Maximum Operating Temperature	150°C
	Transistor Configuration	Dual
	Standards/Approvals	No
	Height	1.12mm
	Length	6.25mm
	Width	5.26mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id -60A
	Maximum Drain Source Voltage Vds -30V
	Package Type PowerPack
	Series SI7997DP
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 5.5mΩ
	Channel Mode Enhancement
	Forward Voltage Vf -1.2V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 51nC
	Maximum Power Dissipation Pd 29W
	Maximum Operating Temperature 150°C
	Transistor Configuration Dual
	Standards/Approvals No
	Height 1.12mm
	Length 6.25mm
	Width 5.26mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay MOSFET is a P-channel, PowerPAK-SO-8 package is a new age product with a drain-source voltage of 30V and maximum gate-source voltage of 20V. It has a drain-source resistance of 5.5mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 46W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen and lead (Pb) free component

• Operating temperature ranges between -55°C and 150°C

• PWM optimised

• TrenchFET power MOSFET

Applications

• Adaptor switches

• Battery management

• Load switches

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy