Vishay Single E 1 N-Channel Power MOSFET, 26 A, 500 V, 3-Pin TO-220AB SIHP25N50E-GE3

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Subtotal 10 units (supplied in a tube)*

PHP2,154.78

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PHP2,413.35

(inc. VAT)

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10 +PHP215.478

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Packaging Options:
RS Stock No.:
180-7790P
Mfr. Part No.:
SIHP25N50E-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

26A

Maximum Drain Source Voltage Vds

500V

Package Type

TO-220AB

Series

E

Pin Count

3

Maximum Drain Source Resistance Rds

0.145Ω

Typical Gate Charge Qg @ Vgs

86nC

Maximum Power Dissipation Pd

250W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30V

Forward Voltage Vf

1.2V

Transistor Configuration

Single

Maximum Operating Temperature

150°C

Width

10.52mm

Standards/Approvals

RoHS

Length

14.4mm

Height

6.71mm

Number of Elements per Chip

1

Automotive Standard

No

COO (Country of Origin):
CN

Vishay Series E Power MOSFET, 500V Drain‑Source Voltage, 26A Continuous Drain Current - SIHP25N50E-GE3


This power MOSFET is an N-channel single transistor in a TO-220AB package designed for high-voltage switching and power conversion tasks. It operates across a wide ambient temperature span and is intended for applications that demand significant power handling and robust gate-drive characteristics.

Features and Benefits:


• 500V drain rating enabling high-voltage switching applications
• 26A continuous drain current for sustained load handling
• 250W maximum power dissipation allowing high-power operation
• 0.145Ω Rds(on) reducing conduction losses under load
• 86nC typical gate charge supporting predictable switching behaviour
• 30V Vgs maximum permitting common gate-drive voltages

Applications


• Suitable for industrial power supplies and converters
• Ideal for switch-mode power topologies in inverters
• Used for motor-drive circuits requiring 500V capability
• Can be used for high-voltage relay and protection switching
• Used with discrete power stages in high-temperature environments

What temperature range can it operate within?


It functions across -55°C to 150°C, accommodating cold starts and elevated operating conditions.

How does the package affect thermal management?


The TO-220AB format permits bolting to a heatsink for enhanced thermal dissipation and improved steady-state thermal resistance.

What gate-drive limits should be observed?


Keep the gate-to-source voltage within ±30V to avoid exceeding the device’s gate threshold tolerances.

Is the device configured for multi-chip implementation?


The die contains a single element per chip, so paralleling requires careful current-sharing design.

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