onsemi NTHL N-Channel MOSFET, 65 A, 650 V Enhancement, 3-Pin TO-247

RS Stock No.:: 178-4448P
Mfr. Part No.:: NTHL040N65S3F
Manufacturer:: onsemi

onsemi NTHL N-Channel MOSFET, 65 A, 650 V Enhancement, 3-Pin TO-247

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RS Stock No.:: 178-4448P
Mfr. Part No.:: NTHL040N65S3F
Manufacturer:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	65A
	Maximum Drain Source Voltage Vds	650V
	Series	NTHL
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	40mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	158nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	446W
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Height	20.82mm
	Width	4.82mm
	Standards/Approvals	No
	Length	15.87mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 65A
	Maximum Drain Source Voltage Vds 650V
	Series NTHL
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 40mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 158nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 446W
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Height 20.82mm
	Width 4.82mm
	Standards/Approvals No
	Length 15.87mm
	Automotive Standard No

COO (Country of Origin):: CN

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.

Features

700 V @ TJ = 150

Ultra Low Gate Charge (Typ. Qg = 158 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 1366pF)

Excellent body diode performance (low Qrr, robust body diode)

Optimized Capacitance

Typ. RDS(on) = 32 mΩ

Applications

Telecommunication

Cloud system

Industrial

Benefits

Higher system reliability at low temperature operation

Lower switching loss

Higher system reliability in LLC and Phase shift full bridge circuit

Lower peak Vds and lower Vgs oscillation

End Products

Telecom power

Server power

EV charger

Solar / UPS

onsemi NTHL N-Channel MOSFET, 65 A, 650 V Enhancement, 3-Pin TO-247

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