Vishay Siliconix TrenchFET N-Channel MOSFET, 12 A, 60 V Enhancement, 6-Pin SC-70-6L SiA106DJ-T1-GE3

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Subtotal 50 units (supplied on a continuous strip)*

PHP2,986.30

(exc. VAT)

PHP3,344.65

(inc. VAT)

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Units
Per Unit
50 - 90PHP59.726
100 - 490PHP50.266
500 - 990PHP40.963
1000 +PHP38.88

*price indicative

Packaging Options:
RS Stock No.:
178-3901P
Mfr. Part No.:
SiA106DJ-T1-GE3
Manufacturer:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

60V

Package Type

SC-70-6L

Series

TrenchFET

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

0.0185Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

6.9nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

19W

Maximum Operating Temperature

150°C

Length

2.2mm

Standards/Approvals

No

Height

1mm

Width

1.35mm

Automotive Standard

No

RoHS Status: Exempt

COO (Country of Origin):
CN
TrenchFET® Gen IV power MOSFET

Very low RDS - Qg Figure-of-Merit (FOM)

Tuned for the lowest RDS – Qoss

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