N-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 Vishay Siliconix SQ2364EES-T1_GE3
- RS Stock No.:
- 178-3877
- Mfr. Part No.:
- SQ2364EES-T1_GE3
- Manufacturer:
- Vishay Siliconix
Subtotal (1 pack of 25 units)**
PHP717.75
(exc. VAT)
PHP804.00
(inc. VAT)
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for over PHP7,000.00 (ex VAT)
Units | Per Unit | Per Pack** |
|---|---|---|
| 25 - 75 | PHP28.71 | PHP717.75 |
| 100 - 475 | PHP27.848 | PHP696.20 |
| 500 - 975 | PHP27.013 | PHP675.325 |
| 1000 + | PHP26.203 | PHP655.075 |
**price indicative
- RS Stock No.:
- 178-3877
- Mfr. Part No.:
- SQ2364EES-T1_GE3
- Manufacturer:
- Vishay Siliconix
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Vishay Siliconix | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT-23 | |
| Series | TrenchFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 600 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 0.46V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 3 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±8 V | |
| Width | 1.4mm | |
| Length | 3.04mm | |
| Typical Gate Charge @ Vgs | 2 nC @ 4.5 V | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.02mm | |
| Automotive Standard | AEC-Q101 | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Manufacturer Vishay Siliconix | ||
Channel Type N | ||
Maximum Continuous Drain Current 2 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-23 | ||
Series TrenchFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 600 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 0.46V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 3 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±8 V | ||
Width 1.4mm | ||
Length 3.04mm | ||
Typical Gate Charge @ Vgs 2 nC @ 4.5 V | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 1.02mm | ||
Automotive Standard AEC-Q101 | ||
Forward Diode Voltage 1.2V | ||
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