Vishay IRF740 N-Channel Power MOSFET, 10 A, 400 V Enhancement, 3-Pin TO-220AB IRF740PBF

RS Stock No.:: 178-0812
Mfr. Part No.:: IRF740PBF
Manufacturer:: Vishay

Vishay IRF740 N-Channel Power MOSFET, 10 A, 400 V Enhancement, 3-Pin TO-220AB IRF740PBF

Subtotal (1 tube of 50 units)*

PHP4,254.50

(exc. VAT)

PHP4,765.00

(inc. VAT)

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In Stock

Plus 1,150 unit(s) shipping from October 12, 2026

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Units	Per Unit	Per Tube*
50 +	PHP85.09	PHP4,254.50

*price indicative

RS Stock No.:: 178-0812
Mfr. Part No.:: IRF740PBF
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	10A
	Maximum Drain Source Voltage Vds	400V
	Package Type	TO-220AB
	Series	IRF740
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	550mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	125W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	63nC
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Forward Voltage Vf	2V
	Maximum Operating Temperature	150°C
	Width	4.7mm
	Standards/Approvals	RoHS
	Length	10.41mm
	Height	9.01mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 10A
	Maximum Drain Source Voltage Vds 400V
	Package Type TO-220AB
	Series IRF740
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 550mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 125W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 63nC
	Maximum Gate Source Voltage Vgs -20V, +20V
	Forward Voltage Vf 2V
	Maximum Operating Temperature 150°C
	Width 4.7mm
	Standards/Approvals RoHS
	Length 10.41mm
	Height 9.01mm
	Automotive Standard No

Vishay IRF740 Series Power MOSFET, 400V Maximum Drain Source Voltage, 125W Maximum Power Dissipation - IRF740PBF

This power MOSFET is a high-voltage N‑channel transistor designed for switching and amplification tasks in power electronics. It operates across a wide temperature range and is supplied in a through-hole TO-220AB package for conventional board mounting and heat‑sinking. The device supports high drain-source voltage environments and is suitable where robust switching capability and manageable gate‑drive requirements are needed.

Features and Benefits:

• 400V drain-source rating enables high‑voltage switching capability
• 10A continuous drain current supports substantial load currents
• 125W power dissipation allows sustained thermal handling
• 550 mΩ Rds(on) provides predictable conduction losses
• 63 nC typical gate charge reduces switching drive energy
• 20V maximum gate-source permits common gate‑drive voltages

Applications

• Suitable for switch‑mode power supply output stages
• Ideal for high‑voltage DC‑DC converter switching
• Used with industrial motor drives requiring high Vds
• Can be used for inverter circuits in power electronics
• Suitable for general‑purpose high‑voltage switching

What thermal range can it tolerate in demanding environments?

The device is rated for operation from -55 °C up to 150 °C, enabling use in a wide range of thermal conditions.

How is the device mounted and cooled in typical designs?

It uses a TO-220AB through‑hole package that accommodates standard heatsinks and screws for thermal management and chassis attachment.

What gate‑drive limitations should designers observe?

The gate must be kept within ±20V maximum relative to source to avoid damage and to maintain correct enhancement‑mode operation.

What channel characteristics affect switching polarity?

It is an N‑channel enhancement‑mode device, meaning it requires a positive gate‑source voltage to conduct.