Vishay IRF740 Type N-Channel Power MOSFET, 10 A, 400 V Enhancement, 3-Pin TO-220AB IRF740PBF

RS Stock No.:: 178-0812
Mfr. Part No.:: IRF740PBF
Manufacturer:: Vishay

Vishay IRF740 Type N-Channel Power MOSFET, 10 A, 400 V Enhancement, 3-Pin TO-220AB IRF740PBF

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Subtotal (1 tube of 50 units)*

PHP4,254.50

(exc. VAT)

PHP4,765.00

(inc. VAT)

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In Stock

Plus 650 unit(s) shipping from August 10, 2026
Plus 1,000 unit(s) shipping from September 25, 2026

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Units	Per Unit	Per Tube*
50 +	PHP85.09	PHP4,254.50

*price indicative

RS Stock No.:: 178-0812
Mfr. Part No.:: IRF740PBF
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	10A
	Maximum Drain Source Voltage Vds	400V
	Series	IRF740
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	550mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	2V
	Typical Gate Charge Qg @ Vgs	63nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	125W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Width	4.7mm
	Length	10.41mm
	Height	9.01mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 10A
	Maximum Drain Source Voltage Vds 400V
	Series IRF740
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 550mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 2V
	Typical Gate Charge Qg @ Vgs 63nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 125W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Width 4.7mm
	Length 10.41mm
	Height 9.01mm
	Automotive Standard No

Vishay IRF740 Series Power MOSFET, 400V Maximum Drain Source Voltage, 125W Maximum Power Dissipation - IRF740PBF

This power MOSFET is a high-voltage N‑channel transistor designed for switching and amplification tasks in power electronics. It operates across a wide temperature range and is supplied in a through-hole TO-220AB package for conventional board mounting and heat‑sinking. The device supports high drain-source voltage environments and is suitable where robust switching capability and manageable gate‑drive requirements are needed.

Features and Benefits:

• 400V drain-source rating enables high‑voltage switching capability
• 10A continuous drain current supports substantial load currents
• 125W power dissipation allows sustained thermal handling
• 550 mΩ Rds(on) provides predictable conduction losses
• 63 nC typical gate charge reduces switching drive energy
• 20V maximum gate-source permits common gate‑drive voltages

Applications

• Suitable for switch‑mode power supply output stages
• Ideal for high‑voltage DC‑DC converter switching
• Used with industrial motor drives requiring high Vds
• Can be used for inverter circuits in power electronics
• Suitable for general‑purpose high‑voltage switching

What thermal range can it tolerate in demanding environments?

The device is rated for operation from -55 °C up to 150 °C, enabling use in a wide range of thermal conditions.

How is the device mounted and cooled in typical designs?

It uses a TO-220AB through‑hole package that accommodates standard heatsinks and screws for thermal management and chassis attachment.

What gate‑drive limitations should designers observe?

The gate must be kept within ±20V maximum relative to source to avoid damage and to maintain correct enhancement‑mode operation.

What channel characteristics affect switching polarity?

It is an N‑channel enhancement‑mode device, meaning it requires a positive gate‑source voltage to conduct.