This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Low threshold - 2.0V max.
High input impedance
Low input capacitance - 50pF typical
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage

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50 - 90	PHP69.827	PHP698.27
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Select all	Attribute	Value
	Manufacturer	Microchip
	Channel Type	N
	Maximum Continuous Drain Current	350 mA
	Maximum Drain Source Voltage	100 V
	Package Type	TO-92
	Series	TN0110
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	4.5 Ω
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2V
	Minimum Gate Threshold Voltage	0.6V
	Maximum Power Dissipation	1 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	20 V
	Number of Elements per Chip	1
	Width	4.06mm
	Maximum Operating Temperature	+150 °C
	Length	5.08mm
	Minimum Operating Temperature	-55 °C
	Height	5.33mm
	Forward Diode Voltage	1.5V

	Select all
	Manufacturer Microchip
	Channel Type N
	Maximum Continuous Drain Current 350 mA
	Maximum Drain Source Voltage 100 V
	Package Type TO-92
	Series TN0110
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 4.5 Ω
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2V
	Minimum Gate Threshold Voltage 0.6V
	Maximum Power Dissipation 1 W
	Transistor Configuration Single
	Maximum Gate Source Voltage 20 V
	Number of Elements per Chip 1
	Width 4.06mm
	Maximum Operating Temperature +150 °C
	Length 5.08mm
	Minimum Operating Temperature -55 °C
	Height 5.33mm
	Forward Diode Voltage 1.5V

N-Channel MOSFET, 350 mA, 100 V, 3-Pin TO-92 Microchip TN0110N3-G

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