onsemi NTMFS6H801N Type N-Channel MOSFET, 157 A, 80 V Enhancement, 5-Pin DFN NTMFS6H801NT1G
- RS Stock No.:
- 172-8986
- Mfr. Part No.:
- NTMFS6H801NT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
PHP828.12
(exc. VAT)
PHP927.495
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- Plus 1,275 unit(s) shipping from August 31, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 45 | PHP165.624 | PHP828.12 |
| 50 - 95 | PHP157.392 | PHP786.96 |
| 100 + | PHP150.768 | PHP753.84 |
*price indicative
- RS Stock No.:
- 172-8986
- Mfr. Part No.:
- NTMFS6H801NT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 157A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | NTMFS6H801N | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 4.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 64nC | |
| Maximum Power Dissipation Pd | 166W | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.1mm | |
| Standards/Approvals | No | |
| Length | 6.1mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 157A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series NTMFS6H801N | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 4.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 64nC | ||
Maximum Power Dissipation Pd 166W | ||
Maximum Operating Temperature 175°C | ||
Width 5.1mm | ||
Standards/Approvals No | ||
Length 6.1mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
Commercial Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance.
Small Footprint (5x6 mm)
Compact Design
Low RDS(on)
Minimize Conduction Losses
Low QG and Capacitance
Minimize Driver Losses
Applications
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
48V systems
Motor Control
Load Switch
DC/DC converter
Synchronous Rectifier
Related links
- onsemi NTMFS6H801N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
- onsemi NVMFS6H801N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
- onsemi NVMFS6H801N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN NVMFS6H801NT1G
- Texas Instruments NexFET Type N-Channel MOSFET 80 V Enhancement, 8-Pin VSON CSD19502Q5BT
- Texas Instruments NexFET Type N-Channel MOSFET 80 V Enhancement, 8-Pin VSON
- Toshiba U-MOSVIII-H Type N-Channel MOSFET 80 V EnhancementS1X(S
- onsemi Type N-Channel MOSFET 40 V Enhancement, 5-Pin DFN
- onsemi NTMFS6H800N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN