onsemi FCH067N65S3 Type N-Channel MOSFET, 44 A, 650 V Enhancement, 3-Pin TO-247 FCH067N65S3-F155

RS Stock No.:: 172-4624
Mfr. Part No.:: FCH067N65S3-F155
Manufacturer:: onsemi

onsemi FCH067N65S3 Type N-Channel MOSFET, 44 A, 650 V Enhancement, 3-Pin TO-247 FCH067N65S3-F155

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 5 units)*

PHP1,550.12

(exc. VAT)

PHP1,736.135

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

215 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Pack*
5 - 20	PHP310.024	PHP1,550.12
25 - 70	PHP284.174	PHP1,420.87
75 - 145	PHP262.468	PHP1,312.34
150 - 220	PHP243.576	PHP1,217.88
225 +	PHP233.636	PHP1,168.18

*price indicative

RS Stock No.:: 172-4624
Mfr. Part No.:: FCH067N65S3-F155
Manufacturer:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	44A
	Maximum Drain Source Voltage Vds	650V
	Series	FCH067N65S3
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	67mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	312W
	Maximum Gate Source Voltage Vgs	30 V
	Typical Gate Charge Qg @ Vgs	78nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	4.82 mm
	Standards/Approvals	No
	Length	15.87mm
	Height	20.82mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 44A
	Maximum Drain Source Voltage Vds 650V
	Series FCH067N65S3
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 67mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 312W
	Maximum Gate Source Voltage Vgs 30 V
	Typical Gate Charge Qg @ Vgs 78nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 4.82 mm
	Standards/Approvals No
	Length 15.87mm
	Height 20.82mm
	Automotive Standard No

COO (Country of Origin):: CN

SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.

700 V @ TJ = 150 oC

Higher system reliability at low temperature operation

Ultra Low Gate Charge (Typ. Qg = 78 nC)

Lower switching loss

Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)

Lower switching loss

Optimized Capacitance

Lower peak Vds and lower Vgs oscillation

Typ. RDS(on) = 62 mΩ

Wave soldering guarantee

Computing

Telecomunication

Industrial

Telecom / Server

Solar inverter / UPS

EVC

onsemi FCH067N65S3 Type N-Channel MOSFET, 44 A, 650 V Enhancement, 3-Pin TO-247 FCH067N65S3-F155

FREE delivery for orders over ₱3,000.00

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