ROHM RD3G500GN Type N-Channel MOSFET, 50 A, 40 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 172-0384
- Mfr. Part No.:
- RD3G500GNTL
- Manufacturer:
- ROHM
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 2500 units)*
PHP116,605.00
(exc. VAT)
PHP130,597.50
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Being discontinued
- Final 5,000 unit(s), ready to ship from another location
Units | Per Unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | PHP46.642 | PHP116,605.00 |
| 5000 - 5000 | PHP45.663 | PHP114,157.50 |
| 7500 + | PHP43.665 | PHP109,162.50 |
*price indicative
- RS Stock No.:
- 172-0384
- Mfr. Part No.:
- RD3G500GNTL
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | RD3G500GN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 35W | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.8mm | |
| Width | 6.4 mm | |
| Standards/Approvals | JEDEC JESD22-A114, JEDEC JESD22-C101, JEITA ED-4701/302 | |
| Height | 2.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series RD3G500GN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 35W | ||
Maximum Operating Temperature 150°C | ||
Length 6.8mm | ||
Width 6.4 mm | ||
Standards/Approvals JEDEC JESD22-A114, JEDEC JESD22-C101, JEITA ED-4701/302 | ||
Height 2.3mm | ||
Automotive Standard No | ||
RD3G500GN is the low on - resistance MOSFET for switching application.
Low on - resistance
High power package (TO-252)
Pb-free lead plating
Halogen free
Related links
- ROHM RD3G500GN Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 RD3G500GNTL
- Infineon OptiMOS-T2 Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Vishay Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Vishay Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 SUD50N04-8M8P-4GE3
- Infineon OptiMOS-T2 Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 IPD50N04S408ATMA1
- ROHM RD3R05BBH Type N-Channel MOSFET 6 V Enhancement, 3-Pin TO-252
- ROHM RD3P07BBH Type N-Channel MOSFET 6 V Enhancement, 3-Pin TO-252
- ROHM RD3P03BBH Type N-Channel MOSFET 6 V Enhancement, 3-Pin TO-252